1. product profile 1.1 general description 200 w ldmos power transistor for base st ation applications at frequencies from 2300 mhz to 2400 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (2300 mhz to 2400 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers fo r base stations and multi carrier applications in the 2300 mhz to 2400 mhz frequency range BLF8G24L-200P; blf8g24ls-200p power ldmos transistor rev. 3 ? 12 july 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 1-carrier w-cdma 2300 to 2400 1740 28 60 17.2 32 ? 37 [1]
BLF8G24L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights rese rved. product data sheet rev. 3 ? 12 july 2013 2 of 13 nxp semiconductors BLF8G24L-200P; blf8g24ls-200p power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the mttf. table 2. pinning pin description simplified outline graphic symbol BLF8G24L-200P (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] blf8g24ls-200p (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF8G24L-200P - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a blf8g24ls-200p - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c t case case temperature [1] - 150 ?c
BLF8G24L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights rese rved. product data sheet rev. 3 ? 12 july 2013 3 of 13 nxp semiconductors BLF8G24L-200P; blf8g24ls-200p power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G24L-200P and blf8g24ls-200p are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1740 ma; p l = 200 w (cw); f = 2300 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 60 w 0.217 k/w table 6. dc characteristics t j = 25 ? c per section, unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d =100ma 1.51.92.3v i dss drain leakage current v gs =0v; v ds =28v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v - 26.8 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =5.1a - 1.2 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.04a -0.1- ? table 7. rf characteristics test signal: 1-carrier w-cdma, par = 7.2 db at 0.01 % probability on the ccdf, 3gpp test model 1; 64 dpch; f 1 =2300mhz; f 2 = 2400 mhz; rf performance at v ds =28v; i dq = 1740 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average output power - 60 - w g p power gain 15.8 17.2 - db rl in input return loss - ? 11 ? 8db ? d drain efficiency 27 32 - % acpr 5m adjacent channel power ratio (5 mhz) - ? 37 ? 33 dbc
BLF8G24L-200P_ls-200p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights rese rved. product data sheet rev. 3 ? 12 july 2013 4 of 13 nxp semiconductors BLF8G24L-200P; blf8g24ls-200p power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . 7.3 test circuit table 8. typical impedance measured load-pull da ta half section; v ds =28v; i dq = 860 ma; typical values unless otherwise specified. f z s [1] z l [1] (mhz) (? ) (? ) 2300 4.24 ? j6.5 1.5 ? j5.4 2400 7.47 ? j6.07 1.5 ? j5.5 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate see table 9 for list of components. fig 2. component layout p p p p & |